| Sample Type | Synthesis Route | Thickness / Size | Annealing | |-------------|----------------|------------------|-----------| | Thin films | Magnetron co‑sputtering (Ar = 3 mTorr, 200 W total) | 2 µm (Si wafer) | 900 °C, 1 h, Ar | | Bulk | Vacuum arc melting (4× re‑melting) → Hot‑isostatic pressing (HIP, 1200 °C, 150 MPa, 4 h) | 30 mm × 30 mm × 5 mm | 1000 °C, 1 h, vacuum |
Guarantees safety and operational longevity under extreme pressure. juq016